data sheet no. pd-6.075-g ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 typical connection features output power mosfets in half-bridge configuration 500v rated breakdown voltage high side gate drive designed for bootstrap operation matched propagation delay for both channels undervoltage lockout 5v schmitt-triggered input logic half-bridge output in phase with hin heatsink version (p2) with improved p d description the ir01h(d)xxx is a high voltage, high speed half bridge. proprietary hvic and latch immune cmos technologies, along with the hexfet power mosfet technology, enable ruggedized single package construction. the logic inputs are compat- ible with standard cmos or lsttl outputs. the front end features an independent high and low side driver in phase with the logic compatible input signals. the output features two hexfets in a half- bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. propagation delays for the high and low side power mosfets are matched to simplify use. high voltage half bridge 1 packages product summary 250v- 214/224 500v - 420 t on/off 130 & 90 ns t rr 260 ns r ds (on) 2.0 w w w w w - h214 1.1 w w w w w - h224 3.0 w w w w w - h420 p d (t a = 25 o c) 2.0w 4.0w - p2 v in (max) hv dc bus note: d1 is not required for the hd type vin com h in 1 2 3 4 6 7 9 vcc com vo v in v b to load h in l in vcc l in d1
2 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage param- eters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. symbol definition min. max. units v in high voltage supply 214/224 -0.3 250 420 -0.3 500 v b high side floating supply absolute voltage 214/224 -0.3 275 420 -0.3 525 vo half-bridge output -0.3 v in + 0.3 v v ih /v il logic input voltage (hin & lin) - 0.3 v cc + 0.3 v v cc low side and logic fixed supply voltage -0.3 25 v dv/dt peak diode recovery dv/dt 3.50 v/ns p d package power dissipation @ t a +25 o c2w - p2 4.0 w r thja thermal resistance, junction to ambient 60 c/w - p2 30 o c/w r thjc thermal resistance, junction to case (heatsink) - p2 20 c/w t j junction temperature -55 150 c t s storage temperature -55 150 o c t l lead temperature (soldering, 10 seconds) 300 c w v
3 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. symbol definition min. max. units v b high side floating supply absolute voltage v o + 10 v o + 20 v v in high voltage supply 214/224 250 v 420 500 v o half-bridge output voltage 214/224 (note 1) 250 v 420 500 v cc low side and logic fixed supply voltage 10 20 v v ih /v il logic input voltage (hin & lin) 0 v cc v t a ambient temperature -40 125 o c id continuous drain current (ta = 25 o c) 214 0.85 a 214-p2 1.4 224 1.1 224-p2 1.9 420 0.7 420-p2 1.1 (ta = 85 o c) 214 0.55 a 214-p2 0.9 224 0.7 224-p2 1.4 420 0.5 420-p2 0.8 (tc = 25 o c) 214-p2 1.7 224-p2 2.3 420-p2 1.4 note 1: logic operational for vo of -5 to 250v (214/224) and 500v (420). logic state held for v0 of -5 to -v b a v
4 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 dynamic electrical characteristics v bias (v cc , v bs ) = 15v and t a = 25c unless otherwise specified. switching time waveform definitions are shown in figure 2. symbol definition min. typ. max. units test conditions t on turn-on propagation delay (see note 2) 130 200 vs = 0v t off turn-off propagation delay (see note 2) 90 200 vs = 500v t r turn-on rise time (see note 2) 80 120 ns t f turn-off fall time (see note 2) 40 70 mt delay matching, hs & ls turn-on/off 30 t rr reverse recovery time (mosfet body diode) 260 i f = 0.7a qrr reverse recovery charge (mosfet body diode) 0.7 c di/dt = 100 a/us note 2: switching times as specified and illustrated in figure 2 are referenced to the mosfet gate input voltage. this is shown as ho in figure 2. static electrical characteristics v bias (v cc , v b ) = 15v and t a = 25c unless otherwise specified. the input voltage and current levels are referenced to com. symbol definition min. typ. max. units test conditions v ccuv + v cc supply undervoltage positive going 8.8 9.3 9.8 v threshold v ccuv- v cc supply undervoltage negative going 7.5 8.2 8.6 v threshold i qcc quiescent v cc supply current 140 240 a i qbs quiescent v bs supply current 20 50 a i os offset supply leakage current 50 a v b = v s = 500v v ih logic 1 input v oltage 2.7 v v cc = 10v to 20v v il logic 0 input v oltage 0.8 v v cc = 10v to 20v i in+ logic 1 input bias current 20 40 i in- logic 0 input bias current 1.0 rds(on) static drain-to-source on-resistance 214 2.0 w id=850ma/t j =150 o c 224 1.1 w id=1.1a/t j =150 o c 420 3.0 w id=700ma/t j =150 o c v sd diode forward voltage 214/420 0.8 v id=700ma/t j =150 o c 224 0.85 id=1.1a/t j =150 o c v v v cc = 10v to 20v a
5 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 functional block diagram lead assignments lead definitions symbol description v cc logic and internal gate drive supply voltage. hin logic input for high side half bridge output, in phase lin logic input for low side half bridge output, in phase v b high side gate drive floating supply v + high voltage supply vo half bridge output com logic and low side of half bridge return 1v cc 2 hin 3 lin 4 com 6 v b 7 vo 9 v in 9 7 6 4 3 2 1 note: xxx = 214 or 224 or 420 d1 included in hd type only ir2101 vin v b com vo vcc h in l in 1 2 3 4 6 7 9 h o v s l o irfcxxx irfcxxx note: xxx = 214 or 224 or 420 d1
6 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 figure 1. input/output timing diagram figure 2. switching time wavef orm definitions figure 3. delay matching waveform definitions hin t r t on t f t off ho 50% 50% 90% 90% 10% 10% vo hin vo lin v+ 0
7 ir01h(d)214 / ir01h(d)214-p2 ir01h(d)224 / ir01h(d)224-p2 ir01h(d)420 / ir01h(d)420-p2 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 473 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 5/98 notes: 1. dimensioning & tolerancing per ansi y14.5m-1982 2. controlling dimension: inch 3. dimensions are shown in millimeters (inches)
|
